PE3010 - N-Channel Enhancement Mode Power MOSFET

Description

The PE3010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON).

semi one

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Datasheet Details

Part number	PE3010
Manufacturer	semi one
File Size	767.38 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE3010 Datasheet
Additional preview pages of the PE3010 datasheet.

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Full PDF Text Transcription

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PE3010 N-Channel Enhancement Mode Power MOSFET Description The PE3010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.

Published: Dec 3, 2018 |