PE3010 Datasheet | semi one

N-Channel Enhancement Mode Power MOSFET Description The PE3010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Marking and pin assignment SOP-8 top...