PE3010 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized .
General Features
* VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V
Schematic diagram
* Hi.
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