PE3010 Datasheet | ChipSourceTek

N-Channel Enhancement Mode Power MOSFET Description The PE3010 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 30V, ID = 10A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application 技 - PWM applications - Load switch k - Power management - Battery Protection Marking and pin assignment 矽源特o科urce Te...