Datasheet4U Logo Datasheet4U.com

PE3010 - N-Channel Enhancement Mode Power MOSFET

Download the PE3010 datasheet PDF. This datasheet also covers the PE3010-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE3010 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 10A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE3010-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE3010
Manufacturer ChipSourceTek
File Size 0.99 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3010 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE3010 N-Channel Enhancement Mode Power MOSFET semi one
PE30100K N-Channel Enhancement Mode Power MOSFET semi one
PE3018U N-Channel Enhancement Mode Power MOSFET semi one
PE300B-10UV CERMAX FOCUSED XENON ARC LAMPS PerkinElmer Optoelectronics
PE300BF CERMAX XENON ARC LAMPS PerkinElmer Optoelectronics

Other Datasheets by ChipSourceTek

Part Number Description
PE30100K N-Channel Power MOSFET
PE3024KC N and P Channel Enhancement Mode Power MOSFET
PE30D10 N-Channel Enhancement Mode Power MOSFET
PE30P11DS P-Channel Enhancement Mode Power MOSFET
PE30P13DS P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE3010 N-Channel Enhancement Mode Power MOSFET Description The PE3010 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 10A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.