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PE3018U - N-Channel Enhancement Mode Power MOSFET

Key Features

  • VDS = 30V,ID = 0.2A RDS(ON) < 4Ω @ VGS=4.5V RDS(ON) < 8Ω @ VGS=2.5V ESD Rating：HBM 2300V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number PE3018U
Manufacturer semi one
File Size 704.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3018U Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET PE3018U General Features ● VDS = 30V,ID = 0.2A RDS(ON) < 4Ω @ VGS=4.5V RDS(ON) < 8Ω @ VGS=2.5V ESD Rating：HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lLamps, hammers,display, memories, transistors, etc.