Part PE3010
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 767.38 KB
semi one

PE3010 Overview

Description

The PE3010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V - High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current