Part PE30100K
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 762.90 KB
semi one

PE30100K Overview

Description

The PE30100K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability