PE30100K - N-Channel Enhancement Mode Power MOSFET

semi one

General Description

The PE30100K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =100A RDS(ON).

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PE30100K n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PE30100K
Manufacturer	semi one
File Size	762.90 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE30100K Datasheet

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PE30100K N-Channel Enhancement Mode Power MOSFET Description The PE30100K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <5.