| Part Number | PE3010 Datasheet |
|---|---|
| Manufacturer | semi one |
| Overview |
The PE3010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =10A RDS(ON) .
* VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V Schematic diagram * High density cell design for ultra low Rdson * Fully characterized Avalanche voltage and current Application * Power switching application * Hard Switched and High Frequency Circuits * Uninterruptible Power S. |
PE3010 Datasheet and Specifications PDF
The PE3010 is a N-Channel Enhancement Mode Power MOSFET.
Key Specifications
| Max Operating Temp | 80 °C |
|---|---|
| Min Operating Temp | -40 °C |
| Part Number | PE3010 Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Manufacturer | ChipSourceTek |
| Overview |
The PE3010 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 30V, ID = 10A
RDS(ON) < 10mΩ @ .
* VDS = 30V, ID = 10A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram * High Power and current handing capability * Lead free product is acquired * Surface Mount Package Application * PWM applications * Load switch k * Power management * Battery Protection Marking and pin . |