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PE3407 Datasheet Preview

PE3407 Datasheet

P-Channel Enhancement Mode Power MOSFET

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PE3407
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE3407 uses advanced trench technology to provide
excellent RDS(ON), This device is suitable for use as a load
switch or in PWM applications.
GENERAL FEATURES
VDS = -30V,ID = -4.3A
RDS(ON) < 90m@ VGS=-4.5V
RDS(ON) <60m@ VGS=-10V
D
G
S
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOT-23-3 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-30
±20
-4.3
-20
1.5
-55 To 150
84
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
Min Typ Max Unit
-30 -33
--
-
-1
V
μA
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Page 1




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PE3407 Datasheet Preview

PE3407 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

PE3407
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4.1A
VGS=-4.5V, ID=-4A
VDS=-5V,ID=-4.1A
-1 -1.5
- 50
- 67
5.5 -
-3
60
90
-
V
m
m
S
Clss
- 700
-
PF
VDS=-15V,VGS=0V,
Coss
- 120
-
PF
F=1.0MHz
Crss
- 75
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V,RL=3.6
VGS=-10V,RGEN=3
-9
-5
- 28
- 13.5
- 14
VDS=-15V,ID=-4A,VGS=-10V -
3.1
- 3.
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-1A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
WWW.SEMI-ONE.COM
Page 2


Part Number PE3407
Description P-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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