PE4606 Datasheet | semi one

DESCRIPTION The PE4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The plementary MOSFET may be used in power inverters, and other applications. GENERAL Features - N-Channel VDS = 30V,ID = 8A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V - P-Channel VDS = -30V,ID = -6A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 42mΩ @ VGS=-10V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package N-channel P-channel Schematic diagram Marking and pin Assignment SOP-8 top...