PE55P5 Datasheet | semi one

P-Channel Enhancement Mode Power MOSFET Description The PE55P5 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - DC-DC Converter Marking and pin assignment SOP-8 top...