PE8806 Datasheet | semi one

N-Channel Enhancement Mode Power MOSFET Description The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features - VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM application - Load switch Schematic...