ChipSourceTek PE8806B
The PE8806B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.| Part No. | PE8806B |
|---|---|
| Datasheet | PE8806B Download |
| Manufacturer |  ChipSourceTek |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. PE8806BGENERAL FEATURES
● VDS = 18V, ID = 6A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=2.5V Schematic diagram● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package 技 Application
● Battery Protection k
● Load switch 科
● Power management Marking and pin assignment 源特 rceTe SOT-23-6L 矽 ou
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) S Parameter Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID IDM PD Rating 18 ±12 6 24 1.5 Unit V V A A W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 83 ℃/W TEL: +86-0755-27595155 27595165 Page 1 FAX: +86-0755-27594792 WEB: E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com 2020 Aug. v1.0 PE8806B Electrica...
