PE8806B Datasheet | ChipSourceTek

N-Channel Enhancement Mode Power MOSFET Description The PE8806B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 18V, ID = 6A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=2.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package 技 Application - Battery Protection k - Load switch 科 - Power management Marking and pin assignment 源特 rceTe SOT-23-6L 矽 ou...