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PE8806B Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: ChipSourceTek

Download the PE8806B datasheet PDF. This datasheet also includes the PE8806B-ChipSourceTek variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE8806B-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE8806B
Manufacturer ChipSourceTek
File Size 760.22 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8806B Datasheet

General Description

The PE8806B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

PE8806B General

Overview

N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS = 18V, ID = 6A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package 技.

📁 Similar Datasheet

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