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PE8806 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: semi one

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Datasheet Details

Part number PE8806
Manufacturer semi one
File Size 883.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Download PE8806 Download (PDF)

General Description

The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

General

Overview

N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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