PED2311N
PED2311N is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
N-Channel Enhancement Mode Power MOSFET
Description
The PED2311N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
General Features
- VDS = 20V,ID =12 A RDS(ON) = 8.0mΩ@ VGS=4.5V RDS(ON) = 10.0mΩ@ VGS=2.5V ESD Rating: 2000V HBM
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM application
- Load switch
Schematic diagram
G2 S2 S2
G1 S1 S1
DFN2x3-6L bottom...
