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PED2311DN - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

  • VDS = 18V, ID = 12A RDS(ON) < 7.5mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 8.6mΩ @ VGS=3.8V RDS(ON) < 10mΩ @ VGS=3.1V RDS(ON) < 11mΩ @ VGS=2.5V ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

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Datasheet preview – PED2311DN

Datasheet Details

Part number PED2311DN
Manufacturer ChipSourceTek
File Size 743.57 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2311DN Datasheet
Additional preview pages of the PED2311DN datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PED2311DN General Features ● VDS = 18V, ID = 12A RDS(ON) < 7.5mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 8.6mΩ @ VGS=3.8V RDS(ON) < 10mΩ @ VGS=3.1V RDS(ON) < 11mΩ @ VGS=2.
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