PED2311DN Datasheet | ChipSourceTek

Description The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features - VDS = 18V, ID = 12A RDS(ON) < 7.5mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 8.6mΩ @ VGS=3.8V RDS(ON) < 10mΩ @ VGS=3.1V RDS(ON) < 11mΩ @ VGS=2.5V ESD Rating: 4000V HBM - High Power and current handing capability - Lead free product is acquired 技 - Surface Mount Package k Application 科 e - PWM applications - Load switch 特 T - Power management Marking 源 rce DFN2x3-6L 矽 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) S Drain-Source Voltage Parameter ip Gate-Source Voltage Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID IDM PD Rating 18 ±12 12 70 1.5 Unit Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note...