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PED2311N Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: semi one

Overview: PED2311N N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number PED2311N
Manufacturer semi one
File Size 393.89 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PED2311N-semione.pdf

General Description

The PED2311N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

General

Key Features

  • VDS = 20V,ID =12 A RDS(ON) = 8.0mΩ@ VGS=4.5V RDS(ON) = 10.0mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

PED2311N Distributor