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PED2311N - N-Channel Enhancement Mode Power MOSFET

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semi one

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PED2311N N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PED2311N

Datasheet Details

Part number	PED2311N
Manufacturer	semi one
File Size	393.89 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2311N Datasheet
Additional preview pages of the PED2311N datasheet.

Product details

Description

The PED2311N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =12 A RDS(ON) = 8.0mΩ@ VGS=4.5V RDS(ON) = 10.0mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |