PED2311DN
PED2311DN is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
Description
The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
General Features
- VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V
ESD Rating: 2000V HBM
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Schematic diagram
G2 S2 S2
G1 S1 S1
DFN2x3-6L bottom view
Application
- PWM application
- Load switch
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Therm...
