Datasheet Details
| Part number | PED2311DN |
|---|---|
| Manufacturer | semi one |
| File Size | 406.32 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 PED2311DN Datasheet
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General Description
The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
Key Features
- VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view.