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PED2311DN - N-Channel Enhancement Mode Power MOSFET

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PED2311DN N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PED2311DN

Datasheet Details

Part number	PED2311DN
Manufacturer	semi one
File Size	406.32 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2311DN Datasheet
Additional preview pages of the PED2311DN datasheet.

Product details

Description

The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view.

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Published: Dec 3, 2018 |