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PED2311DN - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

Features

  • VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view.

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Datasheet preview – PED2311DN

Datasheet Details

Part number PED2311DN
Manufacturer semi one
File Size 406.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2311DN Datasheet
Additional preview pages of the PED2311DN datasheet.

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Full PDF Text Transcription

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PED2311DN N-Channel Enhancement Mode Power MOSFET Description The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.
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