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ACE4922 Dual N-Channel Enhancement Mode MOSFET

ACE4922 Description

ACE4922 Dual N-Channel Enhancement Mode MOSFET .
The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ACE4922 Features

* N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)

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Datasheet Details

Part number
ACE4922
Manufacturer
ACE Technology
File Size
567.99 KB
Datasheet
ACE4922-ACETechnology.pdf
Description
Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode MOSFET ACE Technology
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