ACE4922 Dual N-Channel Enhancement Mode MOSFET

ACE Technology

Description

ACE4922 Dual N-Channel Enhancement Mode MOSFET .
The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: ACE4922
Manufacturer: ACE Technology
File Size: 567.99 KB
Datasheet: ACE4922-ACETechnology.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Features

* N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)

ACE4922 Distributors

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ACE4922 Dual N-Channel Enhancement Mode MOSFET ACE Technology

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