ACE4908A Datasheet - ACE Technology

ACE4908A Dual P-Channel Enhancement Mode MOSFET

The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly.

ACE4908A Features

* P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Manag

ACE4908A Datasheet (421.80 KB)

ACE4908A Datasheet Preview — Preview of ACE4908A PDF

Datasheet Details

Part number:

ACE4908A

Manufacturer:

ACE Technology

File Size:

421.80 KB

Description:

Dual p-channel enhancement mode mosfet.

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ACE4908A Dual P-Channel Enhancement Mode MOSFET ACE Technology

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