ACE4908A Dual P-Channel Enhancement Mode MOSFET

ACE Technology

Description

ACE4908A Dual P-Channel Enhancement Mode MOSFET .
The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: ACE4908A
Manufacturer: ACE Technology
File Size: 421.80 KB
Datasheet: ACE4908A-ACETechnology.pdf
Description: Dual P-Channel Enhancement Mode MOSFET

Features

* P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS (ON)

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ACE4908A Dual P-Channel Enhancement Mode MOSFET ACE Technology

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