ACE5212A Datasheet, Mosfet, ACE Technology

✔ ACE5212A Features

20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V
Super high density cell design for extremely low RDS (ON)

✔ ACE5212A Application

such as notebook computer power management and other battery powered circuits where high-side switching, low

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ACE5212A

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ACE Technology

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407.57kb

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📄 Datasheet

Description:

N-channel mosfet. The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench techn

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ACE5212A N-Channel MOSFET ACE Technology