ACE5212A Datasheet - ACE Technology

ACE5212A N-Channel MOSFET

The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suit.

ACE5212A Features

* 20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V

* 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V

* 20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability Application

* Drivers

ACE5212A Datasheet (407.57 KB)