ACE5213A Datasheet (ACE Technology)

ACE5213A, P-Channel MOSFET

The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suit

ACE5213A Features

* P-Channel -20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability Application

* Drivers : R