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ACE5213A

P-Channel MOSFET

ACE5213A Features

* P-Channel -20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability Application

* Drivers : R

ACE5213A General Description

The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suit.

ACE5213A Datasheet (434.02 KB)

Preview of ACE5213A PDF

Datasheet Details

Part number:

ACE5213A

Manufacturer:

ACE Technology

File Size:

434.02 KB

Description:

P-channel mosfet.

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ACE5213A P-Channel MOSFET ACE Technology

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