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SSC8029GN2 Datasheet - AFSEMI

P-Channel Enhancement Mode MOSFET

SSC8029GN2 General Description

This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuit.

SSC8029GN2 Datasheet (605.65 KB)

Preview of SSC8029GN2 PDF

Datasheet Details

Part number:

SSC8029GN2

Manufacturer:

AFSEMI

File Size:

605.65 KB

Description:

P-channel enhancement mode mosfet.

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SSC8029GN2 P-Channel Enhancement Mode MOSFET AFSEMI

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