SSC8029GS6A Datasheet - AFSEMI

SSC8029GS6A, P-Channel Enhancement Mode MOSFET

This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

Features

* VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A

Applications

* Load Switch
* Portable Devices
* DCDC conversion
* Charging
* Driver for Relay,Solenoid,Motor,LED etc.

SSC8029GS6A-AFSEMI.pdf

SSC8029GS6A Datasheet Preview — Preview of SSC8029GS6A PDF

Datasheet Details

Part number:

SSC8029GS6A

Manufacturer:

AFSEMI

File Size:

592.47 KB

Description:

P-channel enhancement mode mosfet

SSC8029GS6A Distributors

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SSC8029GS6A P-Channel Enhancement Mode MOSFET AFSEMI

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