SSC8029GS6A P-Channel Enhancement Mode MOSFET

Description

SSC8029GS6A P-Channel Enhancement Mode MOSFET * .
This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with l.

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Datasheet Specifications

Part number: SSC8029GS6A
Manufacturer: AFSEMI
File Size: 592.47 KB
Datasheet: SSC8029GS6A-AFSEMI.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A

Applications

* Load Switch
* Portable Devices
* DCDC conversion
* Charging
* Driver for Relay,Solenoid,Motor,LED etc.

SSC8029GS6A Distributors

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SSC8029GS6A P-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8029GS6A-like datasheet