AGM042N10C - MOSFET
AGM042N10C Features
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* Application
* MB/VGA Vcore
* SMPS 2nd Synchronous Rectifier
* POL
