AGM056N10H Datasheet - AGMSEMI

AGM056N10H MOSFET

AGM056N10H Features

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rectifier

* POL application

* BLDC Motor driver Product Summa

Datasheet Details

AGM056N10H

AGMSEMI

1.25 MB

Mosfet.

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