AGM056N10H MOSFET

Description

AGM056N10H * General .
The AGM056N10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Datasheet Specifications

Features

* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance

AGM056N10H Distributors

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