AGM056N10H - MOSFET
AGM056N10H Features
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance
* Application
* MB/VGA Vcore
* SMPS 2nd Synchronous Rectifier
* POL application
* BLDC Motor driver Product Summa
