AGM65N20AT Datasheet - AGMSEMI

AGM65N20AT MOSFET

AGM65N20AT Features

* BVDSS RDSON ID 200V 17mΩ 75A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-247 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Recti

Datasheet Details

AGM65N20AT

AGMSEMI

1.79 MB

Mosfet.

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