AGM7N65D Datasheet, Mosfet, AGMSEMI

✔ AGM7N65D Features

BVDSS RDSON ID 650V 1.37Ω 7A
Advance high cell density Trench technology
Low RDS(ON) to minimize conductive loss
Low Gate Charge for fast switching TO-252 P

✔ AGM7N65D Application

Features BVDSS RDSON ID 650V 1.37Ω 7A
Advance high cell density Trench technology
Low RDS(ON)

PDF File Details

Part number:

AGM7N65D

Manufacturer:

AGMSEMI

File Size:

713.02kb

Download:

📄 Datasheet

Description:

Mosfet. The AGM7N65D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Sum

📥 Download PDF (713.02kb)

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AGM7N65D MOSFET AGMSEMI