AGM7N65D Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 650V 1.37Ω 7A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-252 Pin Configuration D

* Low Thermal resistance

* Application

* Electronic Ballast

* Electronic Transf

AGM7N65D

AGMSEMI

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Mosfet.

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AGM7N65D MOSFET AGMSEMI

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