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AGM7N65D MOSFET

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Description

AGM7N65D * General .
The AGM7N65D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM7N65D
Manufacturer
AGMSEMI
File Size
713.02 KB
Datasheet
AGM7N65D-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 650V 1.37Ω 7A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching TO-252 Pin Configuration D
* Low Thermal resistance

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