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AGMH70N70C Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 68V 6.9mΩ 69A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-220 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Application

AGMH70N70C

AGMSEMI

607.69 KB

Mosfet.

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AGMH70N70C MOSFET AGMSEMI

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