AGMH022P10H Datasheet - AGMSEMI

MOSFET

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rectifier

* POL applic

AGMH022P10H

AGMSEMI

1.39 MB

Mosfet.

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AGMH022P10H MOSFET AGMSEMI

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