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AGMH022P10H Datasheet - AGMSEMI

AGMH022P10H, MOSFET

AGMH022P10H * General .
The AGMH022P10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
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AGMH022P10H-AGMSEMI.pdf

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Datasheet Details

Part number:

AGMH022P10H

Manufacturer:

AGMSEMI

File Size:

1.39 MB

Description:

MOSFET

Features

* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested

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