Datasheet Details
- Part number
- AGMH022P10H
- Manufacturer
- AGMSEMI
- File Size
- 1.39 MB
- Datasheet
- AGMH022P10H-AGMSEMI.pdf
- Description
- MOSFET
AGMH022P10H Description
AGMH022P10H * General .
The AGMH022P10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
AGMH022P10H Features
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
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