AGMH10P15C Datasheet, Mosfet, AGMSEMI

AGMH10P15C Features

  • Mosfet
  • Advance high cell density Trench technology
  • Low RDS(ON) to minimize conductive loss
  • Low Gate Charge for fast switching
  • Low Thermal resistance

PDF File Details

Part number:

AGMH10P15C

Manufacturer:

AGMSEMI

File Size:

730.26kb

Download:

📄 Datasheet

Description:

Mosfet. The AGMH10P15C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device

Datasheet Preview: AGMH10P15C 📥 Download PDF (730.26kb)
Page 2 of AGMH10P15C Page 3 of AGMH10P15C

AGMH10P15C Application

  • Applications
  • Features
  • Advance high cell density Trench technology
  • Low RDS(ON) to minimize conductive loss
  • L

TAGS

AGMH10P15C
MOSFET
AGMSEMI

📁 Related Datasheet

AGMH12H05H - MOSFET (AGMSEMI)
AGMH12H05H ● General Description The AGMH12H05H bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.

AGMH12N10C - MOSFET (AGMSEMI)
AGMH12N10C ● General Description The AGMH12N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.

AGMH12N10D - MOSFET (AGMSEMI)
AGMH12N10D ● General Description The AGMH12N10D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.

AGMH1405C - MOSFET (AGMSEMI)
AGMH1405C ● General Description The AGMH1405C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.

AGMH022N10C - MOSFET (AGMSEMI)
AGMH022N10C ● General Description The AGMH022N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.

AGMH022P10H - MOSFET (AGMSEMI)
AGMH022P10H ● General Description The AGMH022P10H bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.

AGMH035N10A - MOSFET (AGMSEMI)
AGMH035N10A ● General Description The AGMH035N10A bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.

AGMH035N10C - MOSFET (AGMSEMI)
AGMH035N10C ● General Description The AGMH035N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.

AGMH20P15D - MOSFET (AGMSEMI)
AGMH20P15D ● General Description The AGMH20P15D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.

AGMH6035D - MOSFET (AGMSEMI)
AGMH6035D ● General Description The AGMH6035D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts