AGMH10P15C Datasheet - AGMSEMI

AGMH10P15C MOSFET

AGMH10P15C Features

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rectifier

* POL

Datasheet Details

AGMH10P15C

AGMSEMI

730.26 KB

Mosfet.

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