AGMH12N10D Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 100V 9.6mΩ 65A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance TO-252 Pin Configuration D

* 100% Avalanche test

* 100% DVDS tested

* Application

AGMH12N10D

AGMSEMI

1.44 MB

Mosfet.

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AGMH12N10D MOSFET AGMSEMI

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