Part number:
AGMH12N10D
Manufacturer:
AGMSEMI
File Size:
1.44 MB
Description:
Mosfet.
AGMH12N10D Datasheet (1.44 MB)
* BVDSS RDSON ID 100V 9.6mΩ 65A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance TO-252 Pin Configuration D
* 100% Avalanche test
* 100% DVDS tested
* Application
AGMH12N10D Datasheet (1.44 MB)
AGMH12N10D
AGMSEMI
1.44 MB
Mosfet.
📁 Related Datasheet
AGMH12N10C - MOSFET
(AGMSEMI)
AGMH12N10C
● General Description
The AGMH12N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
AGMH12H05H - MOSFET
(AGMSEMI)
AGMH12H05H
● General Description
The AGMH12H05H bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
AGMH10P15C - MOSFET
(AGMSEMI)
AGMH10P15C
● General Description
The AGMH10P15C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
AGMH1405C - MOSFET
(AGMSEMI)
AGMH1405C
● General Description
The AGMH1405C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
AGMH022N10C - MOSFET
(AGMSEMI)
AGMH022N10C
● General Description
The AGMH022N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
AGMH022P10H - MOSFET
(AGMSEMI)
AGMH022P10H
● General Description The AGMH022P10H bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
AGMH035N10A - MOSFET
(AGMSEMI)
AGMH035N10A
● General Description
The AGMH035N10A bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
AGMH035N10C - MOSFET
(AGMSEMI)
AGMH035N10C
● General Description
The AGMH035N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
