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AGMH12N10D MOSFET

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Description

AGMH12N10D * General .
The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGMH12N10D
Manufacturer
AGMSEMI
File Size
1.44 MB
Datasheet
AGMH12N10D-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 100V 9.6mΩ 65A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance TO-252 Pin Configuration D
* 100% Avalanche test
* 100% DVDS tested

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