Datasheet Details
- Part number
- AGMH12N10D
- Manufacturer
- AGMSEMI
- File Size
- 1.44 MB
- Datasheet
- AGMH12N10D-AGMSEMI.pdf
- Description
- MOSFET
AGMH12N10D Description
AGMH12N10D * General .
The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
AGMH12N10D Features
* BVDSS
RDSON
ID
100V
9.6mΩ
65A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance
TO-252 Pin Configuration
D
* 100% Avalanche test
* 100% DVDS tested
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