AGMH12N10D Datasheet - AGMSEMI

AGMH12N10D, MOSFET

AGMH12N10D * General .
The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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AGMH12N10D-AGMSEMI.pdf

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Datasheet Details

Part number:

AGMH12N10D

Manufacturer:

AGMSEMI

File Size:

1.44 MB

Description:

MOSFET

Features

* BVDSS RDSON ID 100V 9.6mΩ 65A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance TO-252 Pin Configuration D
* 100% Avalanche test
* 100% DVDS tested

AGMH12N10D Distributors

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AGMH12N10D MOSFET AGMSEMI

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