Datasheet Details
- Part number
- AGMH12N10C
- Manufacturer
- AGMSEMI
- File Size
- 1.33 MB
- Datasheet
- AGMH12N10C-AGMSEMI.pdf
- Description
- MOSFET
AGMH12N10C Description
AGMH12N10C * General .
The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
AGMH12N10C Features
* BVDSS
RDSON
ID
100V
9.6mΩ
55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
TO-220 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* Applicatio
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