AGMH12N10C Datasheet - AGMSEMI

AGMH12N10C MOSFET

AGMH12N10C Features

* BVDSS RDSON ID 100V 9.6mΩ 55A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-220 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Applicatio

Datasheet Details

AGMH12N10C

AGMSEMI

1.33 MB

Mosfet.

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