AGMH12N10C Datasheet, Mosfet, AGMSEMI

AGMH12N10C Features

• Mosfet BVDSS RDSON ID 100V 9.6mΩ 55A
• Advance high cell density Trench technology
• Low RDS(ON) to minimize conductive loss
• Low Gate Charge for fast switching

PDF File Details

Part number:

AGMH12N10C

Manufacturer:

AGMSEMI

File Size:

1.33MB

Download:

📄 Datasheet

Description:

Mosfet. The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product S

AGMH12N10C Application

• Applications
• Features BVDSS RDSON ID 100V 9.6mΩ 55A
• Advance high cell density Trench technology
• Low RDS(ON) to

TAGS

AGMH12N10C

AGMSEMI

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