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AGMH12N10C

MOSFET

AGMH12N10C Features

* BVDSS RDSON ID 100V 9.6mΩ 55A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-220 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Applicatio

AGMH12N10C Datasheet (1.33 MB)

Preview of AGMH12N10C PDF

Datasheet Details

Part number:

AGMH12N10C

Manufacturer:

AGMSEMI

File Size:

1.33 MB

Description:

Mosfet.

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TAGS

AGMH12N10C MOSFET AGMSEMI

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