Part number:
AGMH12N10C
Manufacturer:
AGMSEMI
File Size:
1.33 MB
Description:
Mosfet.
* BVDSS RDSON ID 100V 9.6mΩ 55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching TO-220 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* Applicatio
AGMH12N10C Datasheet (1.33 MB)
AGMH12N10C
AGMSEMI
1.33 MB
Mosfet.
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