AGMH12N10C Datasheet - AGMSEMI

AGMH12N10C, MOSFET

AGMH12N10C * General .
The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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AGMH12N10C-AGMSEMI.pdf

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Datasheet Details

Part number:

AGMH12N10C

Manufacturer:

AGMSEMI

File Size:

1.33 MB

Description:

MOSFET

Features

* BVDSS RDSON ID 100V 9.6mΩ 55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching TO-220 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* Applicatio

AGMH12N10C Distributors

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AGMH12N10C MOSFET AGMSEMI

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