AGMH12H05H Datasheet - AGMSEMI

AGMH12H05H - MOSFET

AGMH12H05H Features

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* 100% Avalanche test

* 100% DVDS tested

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rectifier

* POL a

Datasheet Details

AGMH12H05H

AGMSEMI

1.80 MB

Mosfet.

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