APEHT-0103 High Temperature Silicon Carbide Schottky Diode

Description

PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky Diode .

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Datasheet Specifications

Part number: APEHT-0103
Manufacturer: APEI
File Size: 396.28 KB
Datasheet: APEHT-0103-APEI.pdf
Description: High Temperature Silicon Carbide Schottky Diode

Features

* High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 nC Tj(max) = 225 C
* AS9100:Rev. C-certified manufacturing, traceable throughout value chain
* Near zero forward and reverse recovery
* Extremely fast switching
* High system efficiency
* Hermetic seal; flux free

Applications

* Downhole tools
* High efficiency converters
* Motor drives
* Aerospace: Military & Commercial
* Smart grid/grid-tie distributed generation TO-254 Package AK A Absolute Maximum Ratings1 (at Tj = 25 C unless otherwise stated) Symbol Parameter VRRM Repetitive peak reverse v

APEHT-0103 Distributors

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APEHT-0103 High Temperature Silicon Carbide Schottky Diode APEI

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