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APEHT-0103

High Temperature Silicon Carbide Schottky Diode

APEHT-0103 Features

* High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 nC Tj(max) = 225 C

* AS9100:Rev. C-certified manufacturing, traceable throughout value chain

* Near zero forward and reverse recovery

* Extremely fast switching

* High system efficiency

* Hermetic seal; flux free

APEHT-0103 Datasheet (396.28 KB)

Preview of APEHT-0103 PDF

Datasheet Details

Part number:

APEHT-0103

Manufacturer:

APEI

File Size:

396.28 KB

Description:

High temperature silicon carbide schottky diode.

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APEHT-0103 High Temperature Silicon Carbide Schottky Diode APEI

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