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MRAL1720-9

NPN SILICON RF POWER TRANSISTOR

MRAL1720-9 Features

* Diffused Ballast Resistors.

* Internal Matching Network

* Omnigold™ Metalization System MAXIMUM RATINGS IC VCES VEBO TJ TSTG θJC 4.0 A (CONT) 42 V 3.5 V -65 °C to +200 °C -65 °C to +150 °C 4.5 °C/W CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob GPB ηc IC = 80 mA IE = 1.

MRAL1720-9 Datasheet (56.04 KB)

Preview of MRAL1720-9 PDF

Datasheet Details

Part number:

MRAL1720-9

Manufacturer:

ASI

File Size:

56.04 KB

Description:

Npn silicon rf power transistor.

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TAGS

MRAL1720-9 NPN SILICON POWER TRANSISTOR ASI

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