MRA1417-11 Datasheet - ASI

MRA1417-11, NPN SILICON RF POWER TRANSISTOR

MRA1417-11 NPN SILICON RF POWER TRANSISTOR .
The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1. Gold Metall.

datasheet Preview Page 1 from Datasheet4u.com

MRA1417-11-ASI.pdf

MRA1417-11 Datasheet Preview — Preview of MRA1417-11 PDF

Datasheet Details

Part number:

MRA1417-11

Manufacturer:

ASI

File Size:

34.31 KB

Description:

NPN SILICON RF POWER TRANSISTOR

Features

* INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATINGS IC 4.0 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 4.5 °C/W PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS

MRA1417-11 Distributors

📁 Related Datasheet

MRA1417-6 MRA100014L MRA100035L MRA10007L MRA112 MRA051050H

📌 All Tags

MRA1417-11 NPN SILICON POWER TRANSISTOR ASI

ASI MRA1417-11-like datasheet