MRA1417-11 NPN SILICON RF POWER TRANSISTOR

ASI

Description

MRA1417-11 NPN SILICON RF POWER TRANSISTOR .
The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1. Gold Metall.

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Datasheet Specifications

Part number: MRA1417-11
Manufacturer: ASI
File Size: 34.31 KB
Datasheet: MRA1417-11-ASI.pdf
Description: NPN SILICON RF POWER TRANSISTOR

Features

* INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATINGS IC 4.0 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 4.5 °C/W PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS

MRA1417-11 Distributors

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MRA1417-11 NPN SILICON POWER TRANSISTOR ASI

ASI MRA1417-11-like datasheet