MRA1417-2 - NPN SILICON RF POWER TRANSISTOR
MRA1417-2 Features
* INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATINGS IC 0.5 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 15 °C/W PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS T
