MRA1417-2 Datasheet - ASI

MRA1417-2, NPN SILICON RF POWER TRANSISTOR

MRA1417-2 NPN SILICON RF POWER TRANSISTOR .
The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1. Gold Metalli.

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MRA1417-2-ASI.pdf

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Datasheet Details

Part number:

MRA1417-2

Manufacturer:

ASI

File Size:

27.14 KB

Description:

NPN SILICON RF POWER TRANSISTOR

Features

* INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATINGS IC 0.5 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 15 °C/W PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS T

MRA1417-2 Distributors

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MRA1417-2 NPN SILICON POWER TRANSISTOR ASI

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