MT5C6404
FEATURES
- Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
- Battery Backup: 2V data retention
- High-performance, low-power CMOS double-metal process
- Single +5V (+10%) Power Supply
- Easy memory expansion with CE
- All inputs and outputs are TTL patible
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is acplished when write enable (WE) and CE inputs are both LOW. Reading is acplished when WE remains HIGH and CE goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All...
