ASC30N1200MT3 Datasheet - AST

ASC30N1200MT3 - 1200V N-Channel MOSFET

V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate .

ASC30N1200MT3 Features

* High Speed Switching with Low Capacitances

* High Blocking Voltage with Low RDS(on)

* Simple to drive with Standard Gate Drive

* 100% avalanche tested

* Maximum junction temperature of 150°C

* ROHS Compliant Application

* EV Charging

* DC-AC Inverters

* High Vol

ASC30N1200MT3-AST.pdf