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ASC30N1200MT4 - 1200V N-Channel MOSFET

General Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Key Features

  • High Speed Switching with Low Capacitances.
  • High Blocking Voltage with Low RDS(on).
  • Optimized package with separate driver source pin.
  • Easy to parallel and simple to drive.
  • ROHS Compliant, Halogen free.

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Datasheet Details

Part number ASC30N1200MT4
Manufacturer AST
File Size 883.88 KB
Description 1200V N-Channel MOSFET
Datasheet download datasheet ASC30N1200MT4 Datasheet

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ASC30N1200MT4 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.