ASC30N1200MT4 Datasheet PDF - AST 1200V N-Channel MOSFET Specs

ASC30N1200MT4 - 1200V N-Channel MOSFET

Datasheet Summary

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Features

High Speed Switching with Low Capacitances.
High Blocking Voltage with Low RDS(on).
Optimized package with separate driver source pin.
Easy to parallel and simple to drive.
ROHS Compliant, Halogen free.

Datasheet Details

Part number	ASC30N1200MT4
Manufacturer	AST
File Size	883.88 KB
Description	1200V N-Channel MOSFET
Datasheet	ASC30N1200MT4 Datasheet
Additional preview pages of the ASC30N1200MT4 datasheet.

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Full PDF Text Transcription

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ASC30N1200MT4 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

Published: Jul 30, 2025 |