ASC30N1200MT4 Datasheet | AST

Description Silicon Carbide (Si C) MOSFET use a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Features - High Speed Switching with Low Capacitances - High Blocking Voltage with Low RDS(on) - Optimized package with separate driver source pin - Easy to parallel and simple to drive - ROHS pliant, Halogen free Application - EV Charging - High Voltage DC/DC Converters - Switch Mode Power Supplies - Power Factor Correction Modules Ordering Information Part Number ASC30N1200MT4 Marking ASC30N1200MT4 Package TO-247 Packaging Tube Absolute Maximum Ratings(Tc=25℃) Symbol Parameter 1200V N-Channel MOSFET Value Unit Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current(continuous)at Tc=100℃ Drain Current (pulsed) Gate-Source Voltage -10/+22...