AST ASC30N1200MT4
The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃ 3 ASC30N1200MT4 Electrical Characteristics Drain-Source Current, IDS (A) On Resistance, RDS On Drain-Source Current, IDS (A) Fig1.| Part No. | ASC30N1200MT4 |
|---|---|
| Datasheet | ASC30N1200MT4 Download |
| Manufacturer | AST |
| Description | 1200V N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.FEATURES
● High Speed Switching with Low Capacitances● High Blocking Voltage with Low RDS(on)
● Optimized package with separate driver source pin
● Easy to parallel and simple to drive
● ROHS Compliant, Halogen free Application
● EV Charging
● High Voltage DC/DC Converters
● Switch Mode Power Supplies
● Power Factor Correction Modules Ordering Information Part Number ASC30N1200MT4 Marking ASC30N1200MT4 Package TO-247 Packaging Tube 1
ABSOLUTE MAXIMUM RATINGS
(Tc=25℃) Symbol Parameter ASC30N1200MT4 1200V N-Channel MOSFET Value Unit VDS Drain-Source Voltage 1200 V ID Drain Current(continu...
