ASC30N1200MT3 - 1200V N-Channel MOSFET

General Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

Key Features

High Speed Switching with Low Capacitances.
High Blocking Voltage with Low RDS(on).
Simple to drive with Standard Gate Drive.
100% avalanche tested.
Maximum junction temperature of 150°C.
ROHS Compliant.

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ASC30N1200MT3 1200v n-channel mosfet by AST - Datasheet Preview

Datasheet Details

Part number	ASC30N1200MT3
Manufacturer	AST
File Size	823.86 KB
Description	1200V N-Channel MOSFET
Datasheet	ASC30N1200MT3 Datasheet

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Description V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.