ASC100N1200MT3 Datasheet | AST

Description Silicon Carbide (Si C) MOSFET use a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Features - High Speed Switching with Low Capacitances - High Blocking Voltage with Low RDS(on) - Simple to drive with Standard Gate Drive - 100% avalanche tested - Maximum junction temperature of 150°C - ROHS pliant Application - EV Charging - DC-AC Inverters - High Voltage DC/DC Converters - Switch Mode Power Supplies - Power Factor Correction Modules - Motor Drives Ordering Information Part Number ASC100N1200MT3 Marking ASC100N1200MT3 Package TO-247 Packaging Tube Absolute Maximum Ratings(Tc=25℃) Symbol Parameter Value Unit Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current(continuous)at Tc=100℃ Drain Current (pulsed) Gate-Source Voltage -10/+25...