ASC100N1200MT3 Datasheet PDF - AST 1200V N-Channel MOSFET Specs

ASC100N1200MT3 - 1200V N-Channel MOSFET

Datasheet Summary

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Features

High Speed Switching with Low Capacitances.
High Blocking Voltage with Low RDS(on).
Simple to drive with Standard Gate Drive.
100% avalanche tested.
Maximum junction temperature of 150°C.
ROHS Compliant.

Datasheet Details

Part number	ASC100N1200MT3
Manufacturer	AST
File Size	1.16 MB
Description	1200V N-Channel MOSFET
Datasheet	ASC100N1200MT3 Datasheet
Additional preview pages of the ASC100N1200MT3 datasheet.

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Full PDF Text Transcription

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V X / Mob:15919711751 ASC100N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

Published: Jan 11, 2025 |