AST ASC100N1200MT3
The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃ 3 Electrical characteristic curves Fig.1 Typical Output Characteristics(I) ASC100N1200MT3 Fig.2 Typical Output Characteristics(II) Figure 3.| Part No. | ASC100N1200MT3 |
|---|---|
| Datasheet | ASC100N1200MT3 Download |
| Manufacturer | AST |
| Description | 1200V N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.FEATURES
● High Speed Switching with Low Capacitances● High Blocking Voltage with Low RDS(on)
● Simple to drive with Standard Gate Drive
● 100% avalanche tested
● Maximum junction temperature of 150°C
● ROHS Compliant Application
● EV Charging
● DC-AC Inverters
● High Voltage DC/DC Converters
● Switch Mode Power Supplies
● Power Factor Correction Modules
● Motor Drives Ordering Information Part Number ASC100N1200MT3 Marking ASC100N1200MT3 Package TO-247 Packaging Tube 1
ABSOLUTE MAXIMUM RATINGS
(Tc=25℃) Symbol Parameter ASC100N1200MT3 Value Unit VDS Drain-Source Voltage 1200 V ID Drain...
