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ASC20N3300MT4 - 3300V N-Channel MOSFET

Datasheet Summary

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

Features

  • High Speed Switching with Low Capacitances.
  • High Blocking Voltage with Low RDS(on).
  • Simple to drive with Standard Gate Drive.
  • 100% avalanche tested.
  • Maximum junction temperature of 150°C.
  • ROHS Compliant.

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Datasheet preview – ASC20N3300MT4

Datasheet Details

Part number ASC20N3300MT4
Manufacturer AST
File Size 580.92 KB
Description 3300V N-Channel MOSFET
Datasheet download datasheet ASC20N3300MT4 Datasheet
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Full PDF Text Transcription

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Description V X / Mob:15919711751 ASC20N3300MT4 3300V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
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