AST ASC100N650MT3
The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃ 3 Drain Source Current，IDS ASC100N650MT3 Electrical Characteristics Fig1.| Part No. | ASC100N650MT3 |
|---|---|
| Datasheet | ASC100N650MT3 Download |
| Manufacturer | AST |
| Description | 650V N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.FEATURES
● High Speed Switching with Low Capacitances● High Blocking Voltage with Low RDS(on)
● Easy to parallel and simple to drive
● ROHS Compliant, Halogen free Application
● EV Charging
● DC/DC Converters
● Switch Mode Power Supplies
● Power Factor Correction Modules
● Solar PV inverters Ordering Information Part Number ASC100N650MT3 Marking ASC100N650MT3 Package TO247-3 Packaging Tube 1 ASC100N650MT3
ABSOLUTE MAXIMUM RATINGS
(Tc=25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ ID Drain Current(continuous)at Tc=100℃ IDM Drain Current (pulsed) VGS...
