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ASC100N650MT3 - 650V N-Channel MOSFET

General Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Key Features

  • High Speed Switching with Low Capacitances.
  • High Blocking Voltage with Low RDS(on).
  • Easy to parallel and simple to drive.
  • ROHS Compliant, Halogen free.

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Datasheet Details

Part number ASC100N650MT3
Manufacturer AST
File Size 0.99 MB
Description 650V N-Channel MOSFET
Datasheet download datasheet ASC100N650MT3 Datasheet

Full PDF Text Transcription (Reference)

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ASC100N650MT3 650V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.