AT28C16-T
ATMEL
97.69kb
16k (2k x 8) pcmcia nonvolatile attribute memory. The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). St
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AT28C16 - 16K 2K x 8 CMOS E2PROM
(ATMEL Corporation)
Features
• Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle
– Internal Address and Data Latches – Inter.
AT28C17 - 16K 2K x 8 CMOS E2PROM
(ATMEL Corporation)
AT28C17
Features
• • • • • • • • • •
Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address an.
AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM
(ATMEL Corporation)
Features
• Fast Read Access Time - 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes – Internal Control Timer .
AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes – Internal Control Timer .
AT28C010 - 1-Megabit (128K x 8) Paged Parallel EEPROM
(Microchip)
1-Megabit (128K x 8) Paged Parallel EEPROM
Features
• Fast Read Access Time: 120 ns • Automatic Page Write Operation:
– Internal address and data latc.
AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer .
AT28C040 - 4-Megabit (512K x 8) Paged Parallel EEPROM
(ATMEL Corporation)
Features
• Read Access Time – 200 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas.
AT28C256 - 256K (32K x 8) Paged Parallel EEPROM
(ATMEL Corporation)
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes – Internal Control Timer •.
AT28C64 - 64K (8K x 8) Parallel EEPROMs
(ATMEL Corporation)
Features
• Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle
– Internal Address and Data Latches – Inter.
AT28C64B - 64K (8K x 8) Parallel EEPROM
(ATMEL Corporation)
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
–.