OPA7716WDD Infrared LED Chip AlGaAs / GaAs 1.
Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs(P/N Type) 2.
Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3.
Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.0 V IF=50mA Reverse Current VR 8 V IR=10uA Power PO 9 mW IF=50mA Wavelength λP 770 ∆λ 30 nm IF=50mA nm IF=50mA ※ Note : Power is measured by Sorter E/T system with bare chip.
4.
Mechanical Data (a
