OPA7716WDD Datasheet - AUK

OPA7716WDD Infrared LED Chip

OPA7716WDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.0 V IF=50mA Reverse Current VR 8 V IR=10uA Power PO 9 mW IF=50mA Wavelength λP 770 ∆λ 30 nm IF=50mA nm IF=50mA ※ Note : Power is measured by Sorter E/T system with bare chip. 4. Mechanical Data (a.

OPA7716WDD-AUK.pdf

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Datasheet Details

Part number:

OPA7716WDD

Manufacturer:

AUK

File Size:

84.34 KB

Description:

Infrared led chip.

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OPA7716WDD OPA7716WDD Infrared LED Chip AUK

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