Datasheet4U Logo Datasheet4U.com

OPA7740EDD Datasheet - AUK

OPA7740EDD Infrared LED Chip

OPA7740EDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.1 V IF=350mA Reverse Current VR 4 V IR=10uA Power PO 17 mW IF=350mA Wavelength λP 770 ∆λ 30 nm IF=50mA nm IF=50mA ※ Note : LED chip is mounted on TO-18 gold header without resin coatin 4. Mechani.

OPA7740EDD Datasheet (94.19 KB)

Preview of OPA7740EDD PDF

Datasheet Details

Part number:

OPA7740EDD

Manufacturer:

AUK

File Size:

94.19 KB

Description:

Infrared led chip.

📁 Related Datasheet

OPA7716WDD Infrared LED Chip (AUK)

OPA7735H Infrared LED Chip (Roithner Lasertechnik)

OPA703 OPERATIONAL AMPLIFIER (Burr-Brown)

OPA704 OPERATIONAL AMPLIFIER (Burr-Brown)

OPA705 Low-Cost / CMOS / Rail-to-Rail / I/O OPERATIONAL AMPLIFIERS (Burr-Brown)

OPA708 REFLECTIVE OBJECT SENSORS (ETC)

OPA725 (OPA725 - OPA726) 12V CMOS Operational Amplifier (Burr-Brown Corporation)

OPA726 (OPA725 - OPA726) 12V CMOS Operational Amplifier (Burr-Brown Corporation)

TAGS

OPA7740EDD Infrared LED Chip AUK

OPA7740EDD Distributor