OPA7740EDD - Infrared LED Chip
OPA7740EDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.1 V IF=350mA Reverse Current VR 4 V IR=10uA Power PO 17 mW IF=350mA Wavelength λP 770 ∆λ 30 nm IF=50mA nm IF=50mA ※ Note : LED chip is mounted on TO-18 gold header without resin coatin 4. Mechani.
