SMN03T80IS - Advanced N-Ch Power MOSFET

Datasheet Details

BVDSS=800V Min.
Low gate charge: Qg=19nC (Typ. ).
Low drain-source On resistance: RDS(on)=4.2Ω (Max. ).
RoHS compliant device.
100% avalanche tested Ordering Information Part Number Marking Package SMN03T80IS SMN03T80 I-PAK (Short Lead) GDS I-PAK Marking Information SMN 03T80 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol.

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Published: Jan 13, 2017 |