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SMN18T50FD

Advanced N-Ch Power MOSFET

SMN18T50FD Features

* Drain-Source breakdown voltage: BVDSS = 500V

* Low gate charge: Qg=65nC (Typ.)

* Low drain-source On resistance: RDS(on)=0.21Ω (Typ.)

* 100% avalanche tested

* RoHS compliant device Ordering Information Part Number Marking Package SMN18T50FD SMN18T50 TO-220F-3L GDS TO-2

SMN18T50FD Datasheet (344.19 KB)

Preview of SMN18T50FD PDF

Datasheet Details

Part number:

SMN18T50FD

Manufacturer:

KODENSHI KOREA

File Size:

344.19 KB

Description:

Advanced n-ch power mosfet.

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TAGS

SMN18T50FD Advanced N-Ch Power MOSFET KODENSHI KOREA

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