SMN04L20IS - Logic Level N-Ch Power MOSFET

Datasheet Details

Drain-Source breakdown voltage: BVDSS=200V (Min. ).
Low gate charge: Qg=4nC (Typ. ).
Low drain-source On-Resistance: RDS(on)=1.35Ω (Max. ).
100% avalanche tested.
RoHS compliant device Ordering Information Part Number Marking Package SMN04L20IS SMN04L20 I-PAK (Short Lead) GDS I-PAK Marking Information SMN 04L20 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless other.

📁 SMN04L20IS Similar Datasheet

SMN0665FL - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMN18T50FD - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMNZ - Ultra High Precision Z-Foil Surface Mount 4 Resistor Network (Vishay)

Other Datasheets by AUK

Published: Jan 13, 2017 |