TMF8901F - Si RF LDMOS Transistor

Datasheet Details

s - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 % (typ. ) www. DataSheet4U. com.
Marking 4 Pin Configuration 1. Gate 2. Source 8901 1 2 3 3. Drain 4. Source.
Absolute Maximum Ratings (TA = 25 ℃) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID Ptot Tc.

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Published: Apr 15, 2007 |